¤ About project
Energy conversion efficiencies over 45% have been recently achieved using conventional III–V semiconductor compounds as photovoltaic materials in tandem cells. The revision of InN bandgap to a much narrower value has extended the fundamental bandgap of the group III-nitride alloy system over almost the entire spectral region (from 0.64 eV for InN to 3.4 eV for GaN or 6.2 eV for AlN), raising the possibility of a variety of new applications. The tunable bandgap, predicted high radiation resistance, and strong absorption coefficient of the InxGa1−xN material system are promising for high-efficiency photovoltaic tandem systems. During the past few years, the interest in InxGa1−xN solar cells has been remarkable. The development of high-performance solar cells using InxGa1−xN materials is one of the most important goals when compared with the existing solar cells using Si and other III–V materials.
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¤ Objectives
The project scope is the demonstration of the feasibility of BInGaN for solar cells applications by realization (proof-of-concept) of a lattice-matched p-i-n GaN/BInGaN/GaN solar cell with B content (≥10%). [ more details....]
¤ Research team members
Keywords: wide band gap nitrides, molecular beam epitaxy, solar cells |
¤ Results. News.:
New! Results (December 2019)
The way the electronic bands align at the BGaN/GaN interface was investigated for the first time by a collaborative study between IMT-Bucharest and Vilnius University. A type-II (staggered-gap) band alignment with the ratio of the conduction-to-valence band discontinuity of 53:43 has been identified at the BGaN/GaN heterojunction for low boron concentrations £ 0.043. The study relys on x-ray photoelectron spectroscopy (XPS) and the observation of concomitant red shift of the deep-level-related yellow luminescence (YL) band and band gap shrinkage of BGaN epilayers with increasing boron content
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Conference presentation: E-MRS 2018, Symposium BB, 18-22.06. 2018, Strasbourg, France (oral presentation)
Effects of boron incorporation on photoluminescence from BGaN alloys - oral presentation (July 22)
Authors : E.-M. Pavelescu (1), O. Ligor (1), C. Romanitan (1), C. Obreja (1), A. Matei (1), M. Carp (1), C. Ticos (2), J. Mickevicius (3), G. Tamulaitis (3).
Affiliations : (1) National Institute for Research and Development in Microtechnologies, Erou Iancu Nicola 126A, 077190, Voluntari, Romania (2) National Institute for Laser, Plasma and Radiation Physics, 077125 Bucharest, Romania (3) Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Vilnius, Lithuania
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Mapping the composition-dependence of the
energy bandgap of GaAsNBi alloys
Appl. Phys. Lett. 115, 082106 (2019); https://doi.org/10.1063/1.5057424
J. Occena1, T. Jen1, J. W. Mitchell1, W. M. Linhart2, E.-M. Pavelescu3, R. Kudrawiec2, Y. Q. Wang4, and R. S. Goldman1,a), 1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA
2Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, 50-370 Wrocław, Poland, 3National Institute for Research and Development in Microtechnologies, 077190 Bucharest, Romania and Hyperion University, 030615 Bucharest, Romania, 4Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA, a) Author to whom correspondence should be addressed: [email protected]
Type-II band alignment of low-boron-content BGaN/GaN heterostructures
J Mickevičius1, M Andrulevicius2, O Ligor3, A Kadys1, R Tomašiūnas1, G Tamulaitis1 and E-M Pavelescu3,4
1Institute of Photonics and Nanotechnology, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania
2 Institute of Materials Science, Kaunas University of Technology, K.Baršausko st. 59, LT-51423 Kaunas, Lithuania
3 National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
4 Faculty of Exact Sciences and Engineering, Hyperion University, Calea Călăraşilor 169, 030615 Bucharest, Romania
Journal of Physics D: Applied Physics, Volume 52, Number 32
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