Financed by:

¤ Objectives

The project scope is the demonstration of the feasibility of BInGaN for solar cells applications by realization (proof-of-concept)  of a  lattice-matched  p-i-n  GaN/BInGaN/GaN solar cell with B content (≥10%).
The scientific and technologic objectives of the ambitious project are:

• The incorporation  by MBE of at least 10% Boron  into InGaN  while maintaining  the lattice matching condition to GaN.
  Boron-containing  InGaN  alloys  have  only  been  grown  so  far  by  MOCVD  [12]  but, unfortunately, the amount of the incorporated B by this technique appears to be limited < 3 %. In this respect, the proposed growth of BInGaN by molecular beam epitaxy (MBE) can be regarded as innovative technology and comes to alleviate the limitations that MOCVD technique has in incorporation of larger amounts of B into InGaN alloys. This objective strongly relies on our very recent success, obtained within our currently running N-IBCell project, by demonstration of a record 7.7% of boron incorporated into GaN using our well equipped MBE system.
  

•  The growth and processing of a p-i-n lattice-matched GaN/BInGaN/GaN  solar cell.
  The  use  of  BInGaN  materials  lattice  matched  to  GaN  in  InGaN-based  solar  cells  is innovative and comes to overcome the usual material deterioration associated with highly mismatched strain and phase segregation of high-In InGaN grown on GaN. If successful, it will open the way towards multijunction solar cells based entirely on a single material system (BInGaN/GaN) achieving thus high conversion efficiencies at considerably reduced costs and high reliabilities (no metamorphic and wafer bonded materials).
  

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¤ General data:

• Project duration: 2017-2019
• Project budgeti: 850 000 RON
• Domain: Physical Sciences and Engineering

¤ Project coordinated by:

National Institute for Research and Development in Microtechnologies-  IMT Bucharest http://www.imt.ro/

National Institute for Research and Development in Microtechnologies- IMT Bucharest
Project director: Dr. Emil Mihai PAVELESCU
E-mail: emil[dot]pavelescu[at]imt[dot]ro
Tel:  +40-21-269.07.70; +40-21-269.07.74;
Fax: +40-21-269.07.72; +40-21-269.07.76;
Website: www.imt.ro