The general objective of the project is to go beyond the state of the art in the domain of SiC-MOS structures, to advance toward the design and fabrication of reliable electronic systems and to generate new technological processes and theoretical knowledge.

The original elements:
- Innovative technology for SiC-MOS devices with high quality oxide/semiconductor interface based on different oxide layers, as well as post-oxidation annealing treatments;
- In-depth investigation of the SiC-MOS capacitors properties using standard analyses and also advanced characterization techniques in order to identify and diminish the main sources of the device instability, low DC mobility and / or poor reliability;

The achievement of a stable and reliable oxide/semiconductor interface for SiC MOS devices, especially for harsh environment sensing applications, to meet the ever increasing demand for electrons or holes mobility, and also to significantly decrease the interface traps density, is urgently needed. Although SiC MOSFETs are now commercially available, the devices still suffer from performance (low channel-carrier mobility and high turn-on voltage) and reliability (threshold voltage instability) issues, which are generally attributed to the large density of active defects that exist in the SiO2/SiC interface region. The advance of SiC technology should respond to these challenges and to offer an increase of systems reliability, while reducing size and cost.