|
Back
Tuesday, October 13, 9:00, Room “A”
PLENARY SESSION 3
(Invited Speakers)
Session PS3: Oral presentations
Chair:
R. Plana, LAAS-CNRS, Toulouse, France
G. Brezeanu, “Politehnica” University of Bucharest,
Romania
PS3.1
9:00 |
SPECIAL EFFECTS IN TRIPLE GATE MOSFETs FABRICATED ON SILICON-ON-INSULATOR (SOI), Y. Bae1, K-I Na2,3,
S. Cristoloveanu2, W. Xiong4, C.R. Cleavelin4, J-H Lee3, 1Uiduk Univ., Gyeongju, South Korea, 2IMEP, Grenoble Polytechnic Inst., Grenoble, France, 3Kyungpook National Univ., Daegu, South Korea, 4Texas Instruments, USA. |
PS3.2
9:30 |
CHARACTERIZATION, MODELLING AND SIMULATION OF SUB-45NM SOI DEVICES,
N. Rodriguez, F. Gámiz, S. Cristoloveanu*, Departamento de Electrónica y Tecnología de Computadores, Granada, Spain, *Inst. de Microelectronique, Electromagnetisme et Photonique IMEP-LAHC-MINATEC, Grenoble, France. |
PS3.3
10:00 |
IGCTs: HIGH-POWER TECHNOLOGY FOR POWER ELECTRONICS APPLICATIONS, I. Nistor, T. Wikström*, M. Scheinert, ABB Switzerland Ltd, Dättwil, *ABB Switzerland Ltd, Semiconductors, Lenzburg, Switzerland. |
|
