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Wednesday, October 13, 9:00, Room “B”MICROPHOTONICS 3
Session O3:
Oral presentations
Joint session with the  FP7 Projects
FlexPAET (IP/NMP) and
MIMOMEMS (CSA⁄Capacities)

Results from EU Projects

Chair:
D. Cristea, IMT-Bucharest, Romania
A. Monmayrant, LAAS CNRS, Toulouse, France

 

Invited
Paper

9:00

HIGHLY-EFFICIENT EMBEDDED ORGANIC LIGHT EMITTER FOR CMOS OPTOELECTRONICS, U. Vogel, B. Richter, R. Herold, T. Presberger, S. Brenner, L. Kroker, K. Fehse, Fraunhofer Inst. Photonic Microsystems (IPMS), Dresden, Germany.



O3.1
9:30

ANALYSIS OF THE TEMPERATURE DISTRIBUTION DURING EMBOSSING OF DIFFRACTIVE OPTICAL ELEMENTS BY NUMERICAL SIMULATION, G. Delette1, E. Pauty1, C. Baum2, R. Voicu3, 1CEA Grenoble – Liten, France, 2Fraunhofer Inst. for Production Technology IPT, Aachen, Germany, 3IMT-Bucharest, Romania.

O3.2
9:50

PRODUCTION OF NEXT GENERATION BACKLIGHT UNITS BY ADAPTIVE STEP AND REPEAT EMBOSSING, C. Baum, C. Brecher, C. Wenzel, F. Niehaus, K. Rinko*, Fraunhofer Inst. for Production Technology IPT, Aachen, Germany, *Oy Modines Ltd., Helsinki, Finland.

O3.3
10:10

HIGH POWER 1100-nm InGaAs/GaAs QUANTUM DOT LASERS, E.-M. Pavelescu, C. Gilfert*, M. Danila, A. Dinescu, J.-P. Reithmaier*, IMT-Bucharest, Romania, *Univ. of Kassel, Germany.

O3.4
10:30
HIGH-BANDWIDTH DIRECTLY-MODULATED 1.3 µm DFB AND DBR LASERS WITH SURFACE GRATINGS, M. Dumitrescu1, A. Laakso1, J. Viheriala1, J.P. Reithmaier2, M. Kamp3, I. Montrosset4, P. Bardella4, G. Eisenstein5, P. Uusimaa6, P. Melanen6, G. Sek7, 1Tampere Univ. of Technology, Finland, 2Kassel Univ., 3Wurzburg Univ., Germany, 4Politecnico di Torino, Italy, 5Technion Inst. of Technology, Israel, 6Modulight Inc., Finland, 7Wroclaw Univ. of Technology, Poland.

 

10:50–11:10   COFFEE  BREAK

 


 
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