PD. 1
9:00

COSMIC RAY IMMUNITY OF NEW IGBT STRUCTURES FOR AEROSPACE APPLICATION, M. Zerarka1,2, P. Austin1,2, M. Bafleur1,2, 1CNRS-LAAS, Toulouse, 2University de Toulouse, France.

PD. 2
9:20

INTEGRATED AVALANCHE DIODE FOR 600V TRENCH IGBT OVER-VOLTAGE PROTECTION, A.P.-S. Hsieh, F. Udrea, W.-C. Lin*, University of Cambridge, UK, *Sinopower Semiconductor, Inc, Taiwan.

PD. 3
9:40

DESIGN AND OPTIMIZATION OF A 250 nm SOI LDMOSFET, G. Camuso1, F. Udrea1, E. Napoli2, X. Luo3, 1 University of Cambridge, UK, 2University of Napoli Federico II, Naples, Italy, 3University of Electronic Science and Technology of China, Chengdu, P.R. China.

PD. 4
10:00

COMPARISON BETWEEN MESA ISOLATION AND P+ IMPLANTATION ISOLATION FOR 4H-SiC MESFET TRANSISTORS, M. Alexandru, V. Banu, M. Vellvehi, P. Godignon, J. Millan, IMB-CNM, CSIC, Barcelona, Spain.

PD. 5
10:20

THE SMALL SIGNAL AMPLIFICATION OF THE GATED DIODE OPERATED IN BREAKDOWN REGIME, Al. Rusu, D. Dobrescu, M. Enachescu*, C. Burileanu, A. Rusu, “Politehnica” University of Bucharest, Romania, *Delft University of Technology, The Netherlands.

PD. 6
10:40

TOWARDS FABRICATION OF VERTICAL SLIT FIELD EFFECT TRANSISTOR (VeSFET) AS NEW DEVICE FOR NANO-SCALE CMOS TECHNOLOGY L. Barbut, D. Bouvet, J.-M. Sallese, EPFL Lausanne, Switzerland.