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Tuesday, October 14, 9:30, Room “A”
PLENARY SESSION 3 (Invited papers)-
Session: (PS3): Oral presentations
Chair:
D. Planson, University de Lyon, Villeurbanne, France
O. Buiu, Honeywell Romania, Bucharest, Romania
| PS3.1 |
9:30 |
ELECTROSTATIC DISCHARGE (ESD) ONE REAL LIFE EVENT: PHYSICAL IMPACT AND PROTECTION CHALLENGES IN ADVANCED CMOS TECHNOLOGIES, P. Galy, STMicroelectronics, Crolles, France. |
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| PS3.2 |
10:00 |
WIDE BANDGAP SEMICONDUCTORS FOR ULTRA HIGH VOLTAGE DEVICES. DESIGN AND CHARACTERIZATION ASPECTS, D. Planson,
P. Brosselard, K. Isoird**, M. Lazar, L.V. Phung, C. Raynaud, D. Tournier, Univ. de Lyon, INSA de Lyon, CNRS UMR 5005, Villeurbanne, France, *Univ. de Toulouse, UPS, LAAS, Toulouse, France. |
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| PS3.3 |
10:30 |
CAPABILITIES AND MATURITY LEVEL OF THE CONTEMPORARY MNTS FOR FABRICATION OF PRODUCTS WITH FUNCTIONAL AND LENGTH SCALE INTEGRATION, R. Minev, Department of Material Science & Material Technology, Faculty of Mechanical and Manufacturing Engineering Univ. of Ruse, Bulgaria. |
11:00–11:30 COFFEE BREAK |
