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Tuesday, October 13, 10:50, Room "B"
ELECTRON DEVICES AND SENSORS MODELLING
Session M: Oral presentations
Chair:
L. Dobrescu, “Politehnica” University of Bucharest
Romania
T. Sandu, IMT Bucharest, Romania
Invited
Paper
10:50 |
ELECTRICAL CONDUCTIVITY OF GRAPHENE: A TIME-DEPENDENT DENSITY FUNCTIONAL THEORY STUDY, S. Bellucci1, A. Sindona1,2, D. Mencarelli1,3, L. Pierantoni1,3, 1Istituto Nazionale di Fisica Nucleare, Roma, Italy, 2Università della Calabria (UNICAL), Cosenza, Italy, 3Università Politecnica delle Marche, Ancona, Italy |
M. 1
11:10 |
NUMERICAL STUDY OF INDUCED ELECTRIC FIELD IN A MICROFLUIDIC SYSTEM FOR CELL ELECTROPORATION,O.T. Nedelcu1, R. Corman1, D. Stan2, C.M. Mihailescu2, 1IMT Bucharest, Romania, 2SC DDS Diagnostic SRL., Bucharest, Romania |
M. 2
11:30 |
MODELLING OF AN AlGaN/GaN SCHOTTKY DIODE AND EXTRACTION OF MAIN PARAMETERS,L. Efthymiou, G. Longobardi,
G. Camuso, A. Pei-Shan Hsieh, F. Udrea, University of Cambridge, UK |
M. 3
11:50 |
CALCULATION OF DIELECTROPHORETIC FORCE ACTING ON BIOLOGICAL CELLS AND ON MICRO- AND NANOPARTICLES,T. Sandu, IMT Bucharest, Romania |
M. 4
12:10 |
STUDY OF THE VON MISES STRESS IN RF MEMS SWITCH ANCHORS,G. Boldeiu*,
D. Vasilache*, V. Moagar*, A. Stefanescu*,
G. Ciuprina**, *IMT Bucharest, Romania, **“Politehnica” University of Bucharest, Romania |
M. 4
12:30 |
ON THE MODELS USED FOR TCAD SIMULATIONS OF DIAMOND SCHOTTKY BARRIER DIODE, N. Donato1,2, M. Antoniou1,
E. Napoli2, G. Amaratunga1, F. Udrea1, 1University of Cambridge, UK, 2University of Naples Federico II, Italy |
13:00-14:30 LUNCH
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