SD. 1
14:00

POWER CYCLING AND SURGE CURRENT TESTER FOR SiC POWER DEVICES,
V. Banu1, P. Brosselard2, X. Jordá3, P. Godignon3,
1D+T Microélectronica A.I.E., Catalonia, Spain,
2Caly Technologies SAS, Villeurbanne Cédex, France,
3IMB-CNM, CSIC, Catalonia, Spain.

SD. 2
14:20

SiO2/SiC INTERFACE IMPROVEMENTS USING AN OXIDIZED THIN FILM OF a-Si,
R. Pascu1, F. Craciunoiu1, M. Kusko1, Gh. Pristavu2, Gh. Brezeanu2,
1IMT Bucharest,
2Univ. “Politehnica” of Bucharest, Romania.

SD. 3
14:40

EXPERIMENTAL ANALYSIS OF THE GATE-LEAKAGE-INDUCED FAILURE MECHANISM IN GaN HEMTs,
C. Unger1, M. Mocanu2, M. Pfost1, P. Waltereit3, R. Reiner3,
1TU Dortmund,
2Reutlingen Univ., Reutlingen,
3Fraunhofer Inst. for Applied Solid State Physics, Freiburg, Germany.