IMT offer in RF MEMS:
advanced design and electromagnetic modelling of micromachined lumped
elements, filters, antennae, receivers, phase shifters, switches in the millimeter and
submillimeter wave range;
mechanical modelling;
masks manufacturing;
technological design;
cooperation for electrical characterization and
technological processing;
organizing of workshops and seminars;
training courses.
IMT expertise:
Manufacturing of lumped elements and distributed filters supported on
thin dielectric membranes (1.5�m SiO2/Si3N4/SiO2) with operating frequency up to 100GHz
(Fig. 1; Fig. 2);
Fig. 1 Silicon micromachined filters for 38 GHZ (left) and for 77GHz (right)
Fig.2 On wafer measurements for the 38GHz (left) and for the 77 GHZ (right) micromachined
filters.
GaAs membrane supported filters for millimeter and submillimeter wave
(Fig. 3);
![wpe1.jpg (5891 bytes)](MEMS.h1.jpg)
Fig. 3 GaAs micromachined filter for 45 GHz
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![fig4.jpg (42878 bytes)](Images/pg2/fig4.jpg)
Fig. 4 S parameters measurements and
simulation of the GaAs micromachined filter for 45 GHz
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Micromachined antennas for millimeter and submillimeter wave (Fig. 7);
![fig7.jpg (70562 bytes)](Images/pg2/fig7.jpg)
Fig. 7 Band-pass filter and Yagi-Uda antenna fabricated on the same membrane
![fig8.jpg (18875 bytes)](Images/pg2/fig8.jpg)
Fig. 8 Measured return losses of the band-pass
filter and Yagi-Uda
antenna fabricated on the same membrane
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Design and modelling of micromachined RF circuits (Fig. 5; Fig. 6);
Fig. 5 Microstrip Antenna Array:
4-patch transmitter antenna layout (left) and simulated 3D radiation pattern (right)
![fig61.jpg (11986 bytes)](Images/pg2/fig61.jpg)
![fig62.jpg (38656 bytes)](Images/pg2/fig62.jpg)
Fig. 6 Double folded slot antenna array for
the 38GHz silicon micromachined
hybrid receiving module: antenna layout (left) and
simulated current density distribution (right)
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Micromachined receiving modules for millimeter and submillimeter wave
(Fig. 9).
![fig9.jpg (19239 bytes)](Images/pg2/fig9.jpg)
Fig. 9 GaAs micromachined monolithic integrated receiving module for 38 GHz
![fig10.jpg (11507 bytes)](Images/pg2/fig10.jpg)
Fig. 10 Experimental voltage sensitivity at several DC bias currents of the 38 GHz
monolithic integrated receiver
Part of the fabrication has been done in Toulouse (France),
Trento (Italy) or Heraklion (Greece).
All these results have been achieved in national as well as international research
projects (bilateral projects, FP 4 Inco Copernicus)
Current work
Research projects in the frame of National programme MATNANTECH
NoE in the frame of FP 6: "AMICOM"(Advanced
MEMS for RF and Millimeter Wave Communications)
Bilateral cooperations with Italy, France, Greece,
Hungary
Project in a joint lab with SAIT (Samsung Advanced
Institute for Technology)