CURRICULUM VITAE

  First name: Cecilia

  Surname: Codreanu

  Date and place of birth: November 05, 1949

  Education: 1972 - M.Sc. in Physics Engineering degree, Faculty of Electronics and Telecommunications, "Politehnica" University of Bucharest (P.U.B.)

  Professional experience:

  Design, manufacturing and characterization of semiconductor devices and ICs: BJTs, JFETs and MESFETs, MOSTs, VCRs, CRs, Bipolar Analog ICs,
  Magneto-transistors and magnetic sensors
  CAD (semiconductor devices and ICs), mathematical modeling and simulation
  Physics of semiconductor materials and devices, physics of defects, radiation effects on semiconductor materials and devices
  New materials and processes: SiC, SOI

  Career:

  1970 -1996: scientific researcher, Research Institute for Electronic Components (ICCE) – Bucharest
  1996 - present: senior scientific researcher, National Institute for R&D in Microtechnologies (IMT-Bucharest); Laboratory "Microphysical characterisation"

  Stages abroad:

  2003, "Politehnica" University of Bucharest, "Quantum Transport in Deep Submicron Devices", intensive course
  2000, NATO-ASI, Erice, Italy, "Defects in SiO₂ and Related Dielectrics: Science and Technology", school
  1996, "Politehnica" University of Bucharest, "Design of Computer Experiment for Process and Device Modelling", intensive course
  1993, "Politehnica" University of Bucharest, "New Advances in Semiconductor Device Simulation" intensive course

  Present position: senior scientific researcher

  Research interests:

  deep submicron semiconductor devices,
  nanostructures,
  nanotechnologies and nanomaterials:

  characterisation methods and techniques
  physical properties
  modelling
  simulation

  Past and current projects:

  "Advanced technique used to characterise dielectrics in capacitive microtransducers" National Research Program "MATNANTECH" (2002-2004)
  "Technological Process for Micromachining Magnetotransistors", National Research Program "RELANSIN" (2001 – 2003)
  "Integrated Hall Sensor Technological Process for Accurate Magnetic Field Measurement", National Research Program "RELANSIN" (1999 – 2003)
  "Irradiation Technique to Increase the Switching Speed of Semiconductor Devices", National Research Program "ORIZONT 2000" (1998-2000)

  Main scientific publications:

  Papers in periodicals:

  C. Codreanu, M. Avram, E. Carbunescu, E. Iliescu, "Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs Performances" "Materials Science in Semiconductor Processing" vol. 3/1-2, pp. 137-142, May 2000
  E. Iliescu, C. Codreanu, M. Badila, V. Banu, A. Badoiu, ^"Post-Irradiation Effects in MOS Structures" "Nuclear Instruments and Methods in Physics Research B – Beam Interactions with Materials & Atoms" Vol. 161-163, Issue 1-4, pp. 381-386, March 2000
  C. Ravariu, A. Rusu1, D.Dobrescu1, L. Dobrescu1 , F. Ravariu, C. Codreanu, M. Avram "A Mathematical Model for Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film" MSM'2000, IEEE Int. Conf. Proc., p.404-407

  Other contributions:

  M. Avram, C. Codreanu, O. Neagoe, C. Voitincu, M. Simion, "A Novel Silicon Integrated Hall Sensor for Accurate Magnetic Field Measurement", EUROSENSORS 2002, Prague, Czechoslovakia
  M. Avram, O. Neagoe, C. Codreanu, C. Voitincu, M. Simion, "An Optimised Bipolar Lateral Magnetotransistor ", CAS 2002, Sinaia, Romania
  C. Codreanu, V. Obreja, C.Ravariu, E. Iliescu, "Excess Surface Currents in SiC Diodes", ICMAT, 2001, Singapore
  C. Codreanu, E. Iliescu, V. Obreja, "Silicon Diode Electrical Characteristics Under Electron-Beam Irradiation Conditions - Experiments and Theoretical Interpretation", CAS 2001, Sinaia, Romania
  C. Codreanu, E. Iliescu, A. Badoiu, M. Avram, C. Ravariu "Radiation Induced Effects in the Si/SiO₂ System" NATO-ASI, ITALY 2000
  C. Ravariu, A. Rusu, C. Codreanu, F. Ravariu "The Flat-Band and Threshold Voltage of a Pseudo-MOS Transistor Made in Simox Technology", 2000, Iasi, Romania
  C. Codreanu, E. Iliescu, A. Angelescu, I. Kleps, "The P-N Junction in SiC and Its High Temperature Limit", TFD 2000, Turkey
  C. Codreanu, E. Vasile, E. Iliescu, A. Badoiu "Computer Simulation of Silicon Free Carrier Lifetime Reduction by Electron-Beam Irradiation", ICACS18, 1999, Denmark

  Member of professional associations: IEEE membership, Societies: Electron Devices, Circuits and Systems, Instrumentation and Measurements, Computers

  Additional information: Referent of the journal IEEE Transactions on Electron Devices

  Foreign languages: English, French

  Contact information: e-mail: [email protected], tel: +40-21-490.84.12, fax: +40-21-490.82.38