Advances in Circuit Simulation Device Models for Real-World Applications.
This presentation explores some of the key developments in device models for circuit simulators (SPICE), encompassing a diverse array of technologies, including novel devices. From High Voltage devices to Power MOSFETs, Gallium Nitride GaN HEMTs and SiC FETs, to Advanced CMOS, memristors and emerging devices, the evolving landscape of SPICE models for semiconductor devices and some of their implications for circuit design and performance optimization are examined. TCAD-based device characteristics, which are a key element in the development of Physics-based SPICE models, are also used along the way to help demonstrate their accuracy. For LEDs and photodetectors we illustrate models that capture their electro-optical characteristics. Furthermore, models for aging effects in advanced CMOS circuits, facilitating resilient circuits for long-term operation, are presented. By providing an overview of recent advancements in circuit simulation device models, informed by practical examples and TCAD-based insights, this presentation aims to empower researchers, device engineers, and circuit designers with knowledge needed to tackle real-world challenges and further drive innovation in semiconductor technology.