Epitaxy and polarization engineering for future III-Nitride heterostructure devices
This presentation will review progress on two key aspects important for the realization of future III-Nitride based devices, which could benefit from this material family particular characteristics (large direct bandgap range from 0.65 to 6 eV and strong polarization fields). The first relates to epitaxy of alloys with compositions spanning the entire ternary range, while the second emphasizes the importance of correct polarization fields engineering. In the first part recent results, in understanding epitaxial surface kinetics of InGaN alloys and achievement of high quality films in the entire composition range, will be discussed. In the second part the importance of correct polarization engineering will be emphasized in two different types of device applications: photovoltaic devices and resonant tunneling diodes.