Towards monolithic quantum computing processors in production FDSOI CMOS technology
This presentation will discuss the feasibility of high-temperature (2-4 K) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm FDSOI CMOS technology, and demonstrate the advantage ofthe SiGe channel hole-spin qubit over its silicon-only electron-spin counterpart. It is also shown that, at 2 K, MOSFETs and cascodes can be operated as quantum dots in the subthreshold region, while behaving as classical MOSFETs and cascodes in the saturation region, suitable for qubits and mm-wave mixed-signal processing circuits, respectively.