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Dissemination of the Results

CONFERENCES 2023

1. International Semiconductor Conference (CAS) 46 Edition,  October 11-13, 2023, Sinaia Romania.
https://www.imt.ro/cas/

 

2. Exploring the oxygen effect on optical properties of amorphous vanadium, oxide thin films, I. Mihalache, S. Vulpe, G. Craciun, C. Romanitan, F. Comanescu, R. Plugaru, International Semiconductor Conference (CAS) 46 Edition, October 11-13, 2023, Sinaia Romania.

3. The structure of electric current across a FTJ at room temperature, T. Sandu, International Semiconductor Conference (CAS) 46 Edition, October 11-13, 2023, Sinaia Romania.

4. EMRS Spring Meeting, Strasbourg, France, May 29 – June
https://www.european-mrs.com/meetings/2023-spring-meeting

5. First principles electron transport in magnetoelectric SrRuO3/BaTiO3/SrTiO3 Interfaces, N. Plugaru, T. Sandu, R. Plugaru, C.Tibeica, N. Filipoiu, G.A. Nemnes, EMRS Spring Meeting, Strasbourg, France, May 29 - June 2,  oral presentation, Spring 23_ Conference program P-7.

6. Phase-electrical function relationship of vanadium oxide based heterostructures, R. Plugaru, S. Vulpe, G. Craciun, C. Romanitan, F. Comanescu, N. Plugaru, EMRS Spring Meeting, Strasbourg, France, May 29 – June 2,  poster presentation,  Spring 23_Conference program Q-8.

 

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New!

• Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering by Rodica Plugaru, Iuliana Mihalache, Cosmin Romaniţan, Florin Comanescu, Silviu Vulpe, Gabriel Craciun, Neculai Plugaru and Nikolay Djourelov, Sensors, 23, 1759 (2023).
  https://doi.org/10.3390/s23041759

• Parametric simulations of composite barrier FTJs under external bias at room temperature, Catalin Tibeica, Titus Sandu, Oana Nedelcu, Rodica Plugaru, Neculai Plugaru, Results in Physics, 47, 106350 (2023). https://www.sciencedirect.com/science/article/pii/S2211379723001432?via%3Dihub

• "Insights into Electron Transport in a Ferroelectric Tunnel Junction", T. Sandu, C. Tibeica,
  R. Plugaru, O. Nedelcu and N. Plugaru, Nanomaterials 12, 1682 (2022). https://doi.org/10.3390/

• "Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction", T. Sandu,
  C. Tibeica, O. Nedelcu, R. Plugaru, N. Plugaru, Int. Semicond. Conf. (CAS), 12-14 Oct. 2022, Conf. Proceedings, pp.113-116 (2022). DOI: 10.1109/CAS56377.2022,
  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9934305

• "Electron transport in magnetoelectric SrRuO3-BaTiO3-SrTiO3 interfaces",
  N. Filipoiu, R. Plugaru, T. Sandu, C. Tibeica and N. Plugaru, in curs de publicare.

• "Physical modeling of ferroelectric tunnel junctions"
  Titus Sandu; Catalin Tibeica; Rodica Plugaru; Oana Nedelcu; Neculai Plugaru
  https://ieeexplore.ieee.org/document/9604149

• "Insights into electron transport in a ferroelectric tunnel junction"
  T. Sandu, O. Nedelcu, C. Tibeica, R. Plugaru, O. Nedelcu, N. Plugaru
  https://icpam.ro/main/wp-content/uploads/BoA-ICPAM-13-v3.pdf

   

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PROJECT OVERVIEW

Atomic scale technologies, involving dimensions less than 10^-10m and characteristic times less than femtosecond, 10^-15s, where the quantum effects reveal their presence (briefly, Quantum Technologies) have become a priority of top research in the field of ferroic materials. These materials are characterized by ferroelectric, magnetic, piezoelectric, or ferrotoroidal properties and show a rich phenomenology, particularly at interfaces. The researches aim to exploit these properties in order to create an advanced generation of sensors and electronic devices with functionalities based on quantum effects, with extremely low energy consumption and high integration density. Applications include, but are not limited to non-volatile multi-state memories, ferro- or magnetoelectric tunel junctions (FTJs) and negative capacitance transistors for synaptic devices, photoferroic solar cells with high energy conversion efficiency, as well as a wide range of  electro-optical sensors.

In the framework of the COMPFER project, the computational design and optimization of ferroic tunel junctions have been performed by using three complementary methods: i) first principles calculations within the density functional theory (DFT); ii) finite element simulations (FEM) and iii) numerical modeling using non-equilibrium Green's functions (NEGFs). The studies have been carried out on heterostructures with ideal interfaces, as well as on models with defects, elastic deformations, or including effects at finite temperature and the modification of the barrier shape under the action of an applied potential. To evaluate the properties of FTJs, a set of performance criteria was considered, including the stability of the ferroelectric polarization, the strength of the interfacial magnetoelectric coupling and the coefficients of merit TER (tunneling electroresistance ratio) and TMR (tunneling magnetoresistance ratio).

The major result of the Project consists in providing insigths into FTJs phenomenology and useful guidelines for their design, by using original approaches on each of the research directions, in accordance with the proposed objectives.
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