Over the past five decades nearly all disruptive advances in science and technology have resulted from the discovery of a new material and, especially, from the way its properties have been exploited by advanced engineering to create novel devices and systems. Subsequently, the continuous development of silicon (Si)-based microelectronics devices has revolutionized our everyday life, but they are now operating close to their theoretical limits in terms of device temperatures, power densities, operational frequencies and dimensions. Due to these limitations, the growth rate of Si-based CMOS technologies is starting to level out and this is becoming a bottleneck for further progress, particularly for the growing field of high-frequency electronics (HFE). To drive progress in devices operating at high frequencies, the exploitation of disruptive materials is absolutely crucial, but a roadmap for the development of these materials and HFE devices is lacking. To overcome the latter problem, NANOFERRO-RF proposes the concept of nanoscale high-frequency oxide electronics (nHF-OE). In order to achieve this goal, NANOFERRO-RF will exploit a major breakthrough in materials science, i.e. the ultra-low voltage high-frequency tunability of novel complex ferroelectric ultrathin films based on doped hafnium oxide, with a thickness of few nanometres. In detail, the focus will be on ternary hafnium zirconium oxides ferroelectrics (which we will refer to as HfZrOf). NANOFERRO-RF is based on recent and complementary achievements of the proponents: for example, we obtained at IMT-Bucharest the first demonstration of extraordinary tunability of high-frequency devices using HfZrOf at very low applied voltages, exploiting a unique atomic layer deposition (ALD) technique to fabricate low-roughness (i.e. less than 0.2 nm) ferroelectric thin films, with a thickness between 6 and 9 nm.