Dr. Giorgia Longobardi, Cambridge University, UK

Dr. Giorgia Longobardi obtained a first class BSC and MSC in Electronic engineering from the University of Naples Federico II in 2007 and 2010, respectively. She joined the High Voltage Microelectronics and Sensors group at University of Cambridge in 2010 where she pioneered the work on GaN-based power devices. In 2010 she was awarded the EPSRC and CHESS scholarships from the U.K. funds to pursue her PhD degree at the University of Cambridge, where she graduated in 2014. Dr. Longobardi won a Follow-on-Fund from EPSRC to further develop the GaN device structures she proposed during her PhD. In October 2016 she was awarded the first prize of the Cambridge Enterprise Post-Doc competition based on the technology in GaN she has developed and she has span-out Cambridge GaN Devices Ltd to manufacture and commercialize this technology. She has also been awarded a Junior Research Fellowship from Gonville and Caius College in Cambridge for 4 years starting from Oct '15. She is currently the leader of the research activity on GaN devices in the Engineering Department at the University of Cambridge and she collaborates as a visiting researcher with LAAS-CNRS in Toulouse, France.