Performance and understanding of 4H-SiC electron devices at low temperature range
4H-Silicon Carbide semiconductor is a more than established material used in power electronics. The fabrication of high quality substrates together with the improvements of oxidation and ion implantation gave a boost to the development and strengthening of electron devices. However, 4H-SiC devices and integrated circuits are though to be used at high temperatures, i.e. over 473K, both due to its intrinsic property of wide band-gap semiconductor and because the limit of the incomplete ionization is avoided. However, the idea to have the same device able to operate from 800K down to 218K or lower is interesting for several applications. For example, the radiation hardness of 4H-SiC devices finds good use in aerospace applications, where the shielded packages can be lighten, but it thought that the low operating temperature can worst the performances of the devices. In this work, we present the potentiality of 4H-SiC devices operating at temperature below 200K as well as the understanding of its limitation. Together with the state-of-art, we also show the first experimental results of 4H-SiC devices operating down to 175K, which are designed for the fabrication of integrate circuits.