CAS 2018 AWARDS
CAS 2018 Organizing Committee is pleased to announce the winners of the Best paper awards. Congratulations to the authors!
CAS 2018 BEST PAPER AWARDS
- REGULATION MECHANISM FOR DICKSON CHARGE PUMPS USING CHARGE RECYCLING AND ADIABATIC CHARGING, F. Bîzîitu1, L. Goraş2,3, 1Infineon Technologies Romania, 2“Gh. Asachi” Technical Univ. Iasi, Romania, 3Inst. for Information Tech. Iasi, Romania
- SURFACE RECOMBINATION EVALUATION IN BIPOLAR JUNCTION TRANSISTORS BY COMBINED ELECTRO-OPTICAL METHOD, V. Banu, J. Montserrat*, X. Jorda*, P. Godignon*, D+T Microelectronica A.I.E., Spain, *IMB-CNM, CSIC, Spain
- MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2, C. Palade, A. Slav, A.M. Lepadatu, I. Stavarache, I. Dascalescu, O. Cojocaru, T. Stoica, M.L. Ciurea, S. Lazanu, National Inst. for R&D in Material Physics, Bucharest, Romania
- MODELING OF HIGH TOTAL IONIZING DOSE (TID) EFFECTS FOR ENCLOSED LAYOUT TRANSISTORS IN 65 NM BULK CMOS, A. Nikolaou1, M. Bucher1, N. Makris1, A. Papadopoulou1, L. Chevas1, G. Borghello2,4, H.D. Koch3,4, F. Faccio4, 1Technical Univ. of Crete, Greece, 2Univ. degli Studi di Udine, Italy, 3Univ. de Mons, Belgium, 4EP Dept., CERN, Switzerland
- WAFER LEVEL PACKAGING OF GaN/Si SAW BAND PASS FILTERS WITH OPERATING FREQUENCIES ABOVE 5 GHZ; A.-C. Bunea1, D. Neculoiu1,2, M.A. Dinescu1, 1IMT Bucharest, 2“Politehnica” Univ. of Bucharest, Romania
METAL-INSULATOR TRANSITION IN MONOLAYER MoS2 FOR TUNABLE AND RECONFIGURABLE DEVICES, M. Aldrigo, M. Dragoman, D. Masotti*, IMT Bucharest, Romania, *Univ. of Bologna, Italy - GeSi NANOCRYSTALS IN SiO2 MATRIX WITH EXTENDED PHOTORESPONSE IN NEAR INFRARED, I. Stavarache1, L. Nedelcu1, V.S. Teodorescu1, V.A. Maraloiu1, I. Dascalescu1, M.L. Ciurea1,2, 1National Inst. for R&D in Material Physics, Bucharest, 2Academy of Romanian Scientists, Bucharest, Romania
- MANUFACTURE AND INVESTIGATION OF A VERTICAL MEMS SWITCH, A. Baracu, R. Müller, R.C. Voicu, M. Pustan*, C. Birleanu*, A. Dinescu, IMT Bucharest, *Technical Univ. of Cluj-Napoca, Romania
CAS 2018 BEST STUDENT PAPER AWARDS
- A HIGH PERFORMANCE MIXED-VOLTAGE DIGITAL OUTPUT BUFFER, A.M. Dragan1,2, A. Enache1,2, A. Negut1, A.M. Tache1, G. Brezeanu2, 1ON Semiconductor Romania, 2“Politehnica” Univ. of Bucharest, Romania
- FAULT IMPACT ASSESSMENT FOR AUTO-MOTIVE SMART POWER PRODUCTS IN AN ELECTRIC POWER STEERING APPLICATION, J. Stricker, C. Kain*, A. Buzo*, J. Kirscher*, L. Maurer, G. Pelz*, Bundeswehr Univ. München, *Infineon Technologies AG, Germany
- MESSAGE RECOVERED: A ROBUST FAULT DETECTION AND REPORTING METHOD FOR GALVANICALLY ISOLATED IGBT GATE DRIVERS, I. Hurez1,2, T. Chen3, F. Vlădoianu2, V. Anghel2, G. Brezeanu1, 1“Politehnica” Univ. of Bucharest, 2ON Semiconductor Romania, Bucharest, 3ON Semiconductor, USA
- OVER-TEMPERATURE PROTECTION FOR A SWITCHED-CAPACITOR DC-DC CONVERTER WITH CONTROLLED CHARGING CURRENT, C.-S. Plesa, M. Neag, C.M. Boianceanu*, Technical Univ. of Cluj-Napoca, *Infineon Technologies, Bucharest, Romania
- INFLUENCE OF PLATINUM-HYDROGEN COM-PLEXES ON SILICON P+/N-DIODE CHARAC-TERISTICS, J. Prohinig1,2, F. Rasinger1, H.-J. Schulze3, G. Pobegen1, 1KAI Kompetenzzentrum Automobil- u. Industrieelektronik GmbH, 2Graz Univ. of Technology, Austria, 3Infineon Technologies AG, Germany