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Strain and bandgap engineered InGaN/BGaN superlattice solar cells
Objectives
The objectives of the project are:
1)The growth by molecular beam epitaxy (MBE) of device-grade InGaN/BGaN superlattice (SL) heterostructures lattice compatible to GaN.
2)The growth and processing of p-i-n lattice compatible GaN/InGaN/BGaN-SL/GaN solar cells.
Project financed by UEFISCDI
PNIII, P2, Programme Increasing the competitiveness of the Romanian economy through RDI, Demonstration experimental project,
ID proiect: PN-III-P2-2.1-PED-2021-3525, Contract no. PED 734 ⁄ 2022
Contact
National Institute for Research and Development in Microtechnologies
IMT Bucharest
Project manager: Dr. Emil Mihai Pavelescu
E-mail: [email protected]
