Dissemination
2024:
Patents
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"I. N. Bratosin, P. I. Varasteanu, „Conector cu prindere de electrozi pentru realizarea unui contact pe spate”, cerere de brevet nr. A/00278, depusa in data de 30.05.2024, la Oficiul de Stat pentru Inventii si Marci (OSIM)".
Articole ISI
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G. Pristavu, G. Brezeanu, D. T. Oneata, R. Pascu, F. Draghici, M. Serbanescu, A. Enache, "Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts" in IEEE Transactions on Electron Devices, Vol. 71, No. 4, pp. 2805 – 2809, 2024. Q2 (IF = 3.1);
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R. Pascu, G. Pristavu, D. T. Oneata, G. Brezeanu, C. Romanitan, N. Djourelov, A. Enache, F. Draghici, A. M. Ivan; E. Ceuca, “Thorough Wide Temperature Range Analysis of Pt/SiC and Cr/SiC Schottky Contacts Non-uniformity”, Materials, 2024, 17, 400. Q2 (IF = 3.4);
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G. Pristavu, D.-. Oneata, R. Pascu*, A. E. Marcu, M.-C. Serbanescu, A. Enache, F. Draghici and G. Brezeanu, „Accurate Numerical Methods for Modeling Forward Characteristics of High Temperature Capable Schottky Diodes”, Romanian Journal of Information Science and Technology articol acceptat spre publicare.
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C. Romanitan, J. M. Caicedo, R. Pascu, I. Mihalache, R. Gavrila, M. Stoian, N. Djourelov, J. Padilla-Pantoja, „Microstructure of VO2 Thin Films Synthesized by Pulsed Laser Deposition”, Romanian Journal of Information Science and Technologyarticol acceptat spre publicare.
2023
ISI articles
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R. Pascu, G. Pristavu, D.-T. Oneata, M. Stoian, C. Romanitan, M. Kusko, F. Draghici, G. Brezeanu, “Enhanced method of Schottky Barrier Diodes performance assessment”, Romanian Journal of Information Science and Technology, Vol. 26, No. 2, pp. 181-192, (2023), Q2 IF.
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R. Plugaru, I. Mihalache, C. Romaniţan, F. Comanescu, S. Vulpe, G. Craciun, N. Plugaru, N. Djourelov, „Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering”. Sensors, Vol. 23, pp. 1759, 2023. Q2 IF.
ISI Proceedings
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R. Pascu, M. Simion, C. Romanitan, I. Mihalache, P. Varasteanu, G. Craciun, „Modified Metal Assisted Photochemical Etching technique for SiC porosification”, IEEE CAS Proceedings 2023, pp. 93 - 96, 2023.
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G. Pristavu, D.-T. Oneata, R. Pascu, M.-C. Șerbănescu, A. Enache, F. Draghici, G Brezeanu, „Modeling forward characteristics of high temperature capable Schottky diodes – High-accuracy optimization methods”, IEEE CAS Proceedings 2023, pp. 85 - 88, 2023.
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G. Brezeanu, G. Pristavu, R. Pascu, F. Draghici "Schottky diode on Silicon Carbide (SiC): ideal detector for very wide temperature range sensors", Proc. SPIE 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI, 1249303 (2 March 2023);
Papers presented at international conferences:
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R. Pascu, M. Simion, C. Romanitan, I. Mihalache, P. Varasteanu, G. Craciun, „Modified Metal Assisted Photochemical Etching technique for SiC porosification”, prezentare orala, International Semiconductor Conference (CAS), 11 – 13 Octombrie 2023, Sinaia, Romania.
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G. Pristavu, D.-T. Oneata, R. Pascu, M.-C. Șerbănescu, A. Enache, F. Draghici, G Brezeanu, „Modeling forward characteristics of high temperature capable Schottky diodes – High-accuracy optimization methods”, prezentare orala, International Semiconductor Conference (CAS), 11 – 13 Octombrie 2023, Sinaia, Romania.
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R. Pascu, G. Pristavu, G. Brezeanu, „Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films”, poster, The International Conference on Silicon Carbide and Related Materials (ICSCRM), 17-22 septembrie 2023, Sorrento, Italia.
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G. Pristavu, D. T. Oneata, R. Pascu, F. Draghici, G. Brezeanu, „Implicit differentiable models for wide temperature range SiC Schottky diode characterization”, The International Conference on Silicon Carbide and Related Materials (ICSCRM), 17-22 septembrie 2023, Sorrento, Italia.
2022
ISI Proceedings
R. Pascu, G. Pristavu, M. Stoian, C. Romanitan, M. Kusko, F. Draghici, D. T. Oneata, G. Brezeanu, „The effect of forming gas annealing on Al/Ti/n-Si contacts”, IEEE CAS Proceedings 2022, pp. 127 - 130, 2022.
Lucrari prezentate la conferinte internationale:
R. Pascu, G. Pristavu, M. Stoian, C. Romanitan, M. Kusko, F. Draghici, D. T. Oneata, G. Brezeanu, „The effect of forming gas annealing on Al/Ti/n-Si contacts”,, prezentare orala, International Semiconductor Conference (CAS), 12 – 14 Octombrie 2022, Poiana Brasov, Romania.
V. Moise, F. Draghici, G. Pristavu, R. Pascu, F. Mitu, G. Brezeanu, „Wide range temperature sensor with SiC Schottky diode – error source analysis”, poster, The International Conference on Silicon Carbide and Related Materials (ICSCRM), 11-16 septembrie 2022, Davos, Elvetia.