Description

- High Vacuum configuration, OHFC copper hearth crucible with 8 pockets
- Fully integrated quartz crystal controller for the automatic control of the thickness
- High deposition rates -  from 1 nm per minute to several μm per minute, depending on the required structural and morphological film control.
- Substrate dimensions:  4 holders for up to 4” diameter samples
- Sandwich multilayer deposition – up to 8 different target materials
- Electron beam acceleration voltages up to 10kV
- Planetary system for substrate rotation during deposition
- Base Pressure: 5x10-7 mbar
- Pressure during the process: in the range of 10-6 mbar

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Last update: November, 2024