Gases:

- N2, O2, Ar, NH3

Secifications:

- 3-inch and 4-inch wafer capability;
- High reliability assures low cost of ownership;
- Stainless steel cold wall chamber technology;
- High process reproducibility;
- Ultra clean and contamination-free environment;
- High cooling rates and low memory effect;
- High vacuum version (10-6 mbar) is available for cleanest process conditions;
- Pyrometer and thermocouple temperature measurement are standard features;
- Fast digital PID temperature controller provides high and stable temperature accuracy (± 1°C) over the temperature range;
- Edge pyrometer viewport insures enhance temperature control of the susceptor for compound;

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Performance characteristics:

• Temperature range: RT to 1250°C
• Ramp rate up to 200°C/s
• Gas mixing capability with mass flow controllers
• Vacuum range: Atmosphere to 10-6 Torr

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Applications:

• Rapid Thermal Oxidation (RTO)
• Rapid Thermal Nitridation (RTN)
• Crystallization and Densification
• Compound semiconductor annealing

Substrates:

• Silicon wafers
• Compound semiconductor wafers
• Glass substrates
• SiC and graphite wafers
• Diffusion
• Silicidation
• Glass reflow
• Sintering (contact alloying)

Advantages:

• Shorter cycle time
• Reduced dopant diffusion and contamination.

Contact Dr. Ileana Cernica,  [email protected]

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Last update: January 24, 2012