The scientific and technologic objectives of the ambitious project are:

1. The incorporation by MBE of at least 8% B into GaN while maintaining the lattice matching condition to the low-costs AlN-on-Si templates .

2. The growth and processing of a lattice-matched BGaN/AlN-on-Si solar cell.

The use of BGaN materials lattice matched to AlN-on-Si in silicon-based solar cells is innovative and comes to overcome the usual material deterioration associated with highly mismatched strain and phase segregation of high-In InGaN grown on Si. If successful, it will open the way towards multijunction solar cells based entirely on a single material system achieving thus high conversion efficiencies at considerably reduced costs and high reliabilities (no metamorphic and wafer bonded materials).