Results
Technology Readiness Level (TRL)
The project started with a formulated technology concept (TRL2). By the end of the project, demonstrative experimental concepts were obtained in the laboratory (TRL3), and the initial feasibility was proven through laboratory experiments (TRL4). The two technologies were validated in a laboratory environment, demonstrating their capability to function as expected under controlled conditions.
The TRL2 level of technological maturity was achieved following previous results, in which nitrogen-doped NiO:N was successfully grown by RF sputtering at room temperature with ferroelectric properties. The attainment of TRL3 was accomplished through the realization of the DM1 and DM2 demonstrators based on ferroelectric films and by performing essential tests for their functionality. This provided the necessary information to refine the design and thickness of the materials. The final laboratory validation at the TRL4 stage of the demonstrators was performed through various retention, cycling, and time tests (105 polarization reversal cycles) between the ON/OFF states (achieving a sufficiently long time equal to 106 seconds), through positive-up, negative-down (PUND) characterizations and measurements, and cyclic I–V, C–V measurements.
To test the reproducibility of the results, at least 100 logic gates based on MFM diodes and at least 100 logic gates based on ferroelectric field-effect transistor memory devices were fabricated at the wafer level.
FERROMEMOLOG addressed the entire technological value chain: materials–devices–components–subsystems, and targeted the progress of ferroelectric materials obtained at the wafer scale, thus representing a major advancement for the realization of devices used in neuromorphic applications.