Results
Technology Readiness Level (TRL)
Within the project, the development of two technologies for manufacturing ferroelectric storage capacitive structures and field-effect transistors using a ferroelectric thin film as the channel material was envisioned.
The developed manufacturing technologies are entirely new and propose the use of new ferroelectric materials such as nitrogen-doped nickel oxide, yttrium-doped hafnium oxide, and zirconium-doped hafnium oxide. These are deposited over a 50 nm aluminum oxide (Al2O3) layer.
The FERROMEMOLOG project has met all the indicators and objectives specified in the funding application. By utilizing the in-plane ferroelectric properties of nitrogen-doped nickel oxide and the bulk ferroelectric properties of yttrium-doped hafnium oxide and zirconium-doped hafnium oxide, ferroelectric storage capacitive structures and ferroelectric field-effect transistor structures were successfully obtained across the entire area of a 4-inch diameter silicon wafer.
The developed technologies can be implemented in various forms and modifications, being adaptable to the current requirements of semiconductor-based manufacturing technologies.