Results
Technology Readiness Level (TRL)
From the perspective of the project's impact, several important elements stand out:
- Leveraging the technical-scientific capacity of IMT in the field of microtechnologies;
- Efficient utilization of IMT's research and development equipment;
- Development of high-level scientific articles;
- Preparation and submission of a patent application;
- Participation in international scientific events in fields specific to the project;
- Development of new and advanced manufacturing technologies for ferroelectric storage capacitive structures and ferroelectric field-effect transistor structures.
The most significant result was achieved through the use of the NiO:N ferroelectric film as the channel, realizing ferroelectric field-effect transistor structures. The results are the subject of a patent application filed with OSIM under number A100340/19.06.2024.
Following the established technological steps, thin films of NiO:N with extremely low roughness, around 0.35 nm across the deposited area, were deposited. Measurements of the FeFETs demonstrated a subthreshold swing (SS) value of 55 mV/decade, ideal for achieving a rapid switch between the ON and OFF states of the transistor. These values are primarily due to the in-plane ferroelectricity property of nitrogen-doped nickel oxide, its spontaneous polarization (exhibiting negative capacitance), the architectural design, the ideal thickness selection of the ferroelectric layer (20 nm), and the equilateral triangular geometry of the upper electrodes (source and drain). At an extremely low voltage, in both polarities, of only 1μV and -1μV, a subthreshold swing SS = ∂VG/(logID) value of 55 mV/decade and a memory window value of 11.82V were recorded.
Given the obtained results, the developed technologies will have a major impact on the development of neuromorphic applications by combining the two devices representing the memory unit and the digital processing unit.