Applications:

• Etching:
  • Bosch process for silicon
  • Cryogenic process for silicon
  • Bosch Process for SiC
• Single wafer processing.
• Can process 4” or smaller wafers, even small pieces.
• Process gases: SF6, C4F8, O2, Ar.

Process characteristics are:

• Si etch rate: 7.5 μm/min
• wafer non-uniformity: less than 3%
• wafer to wafer non-uniformity: less than 3%
• etching profile: 90o±1o vertical side-walls
• selectivity: 50:1 for PR mask or 200:1 for SiO2 mask
• aspect ratio: 20:1

Applications:

Typical applications for the basic configuration are:

• the etching of dielectrics (SiO2, Si3N4),
• semiconductors (Si),
• polymers and metals (Au, Pt, Ti, Ni).

General description:

The Etchlab 220 is a single wafer Reactive Ion Etching (RIE) machine. The substrates (wafer, carrier, small pieces) are directly loaded onto the substrate electrode after venting and opening the reactor. The control of the process can be manual or automated, using the included Sentech software. The recipe is controlled directly through the software, the gas concentration can be easily set by the technician.

General description:

• Particle Image Velocimetry (PIV) is a robust technique for measuring fluid velocity.
• Workstation for microscopic imaging applications.
• The method is an optical, non-intrusive technique measuring the movement of small tracer particles by means of a camera and pulsed laser light.
• With this technique the flow velocity fields are mapped in 2D.

System architecture:

• Microscope:
  - Hi-Performance Leica Inverted Microscope.
• Acquisition and control units
  - 80N77 Timer Box
• Camera
  - Hi-Sense 4M cooled camera
• Illumination
  - Micro-Strobe. Green.
  - Dual-Power 65-15 Laser 2x65 mJ at 15 Hz, 532 nm

Applications:

• Bonding processes:
  • Silicon to silicon
  • Silicon to glass
  • Pressure/heat assisted polymer bonding
  • Adhesive/pressure/heat assisted bonding

General Characteristics :

• Lower hot bond chuck with temperature control from ambient to 500oC
• Negative High Voltage DC power supply for Anodic bonding
• Flexible process: can accommodate polymer and adhesive bonding of different substrates

Performance:

• temperature control ± 3oC
• temperature uniformity ± 2%
• up to 8kN applied force
• process vacuum pressure down to 5*10-4 mbar

Advantages:

• Strong durable bonds
• Excellent for encapsulation
• Excellent for enclosure of fluidic microchannels
• User friendly recipe editor for non-standard processes

Applications:

• Studies of various materials thickness on small scales.
• Accurate measurements of grown or deposited thin films.
• The provided information is useful for optimising silicon oxide growth or deposition of oxides and nitrides in LPCVD and PECVD equipments.
• Provides useful information regarding spin coated polymers and photoresists.
• Measurement of refractive index

General characteristics:

• Transmission and reflection measurements of anti-reflective & hardness coatings
• Wide wavelength measurements (250nm to 1050 nm)
• Can measure up to 10 layer stacks
• Angle of incidence: 90o

Performances:

• Resolution: 0.1 nm
• Thickness range: 10nm to 100μm
• Defect and roughness tolerant measurements
• Database for a broad range of materials
• Fast measurement process: 100ms to 1s