The concrete objectives of STEERING-GRAPH can be summarized as follows:

- Objective 1: design, fabrication, and experimental characterisation of NCG-based antennas and antenna arrays (up to maximum 4 elements) for two bands of interest: X band (i.e., 8–12 GHz) for radar/satellite communications, and ISM (Industrial, Scientific, and Medical) 24-GHz band (i.e., 24–24.25 GHz). These antennas will have frequency and gain tunable properties through the application of the proper DC bias voltage onto the carbon-based nanoscale layer. The fabrication will be done preferably on 4ʺ HRSi wafers for CMOS compatibility.

- Objective 2: design, fabrication, and experimental characterisation of two- or three-terminal memristors based on dielectric/ferroelectric hafnium oxides and graphene/graphite. Other oxides will be considered as potential candidates to increase the ROFF/RON ratio of ReRAM memristors and, thus, enhance their non-volatility and switching capabilities (like AlxOy/TiO2, SiO2/TiO2, ZnO/TiO2, and HfOx/TiO2). As regards memtransistors, we will target the optimal multilayer configuration that allows obtaining the orthorhombic phase of HfO2 using the combined effects of strain and doping induced by a certain dopant (among them, Zr, Al, Si, and Y). In this case, the maximum ID,OFF/ID,ON (drain current in the OFF- and ON-state, respectively) ratio will be the main goal. Low forming and switching voltages (ReRAM memristors, SET/RESET voltages), as well as very low drain voltages (memtransistors) are envisaged (i.e., of maximum 2 V).

- Objective 3: hybrid and, then monolithic integration of antenna arrays and memristors/memtransistors for „non-volatile and low-power beamforming applications”. The hybrid integration will be the first step to validate the final concept of monolithic beamforming antenna array, in the sense that the optimized antenna arrays and the optmized memristor-like switches will be bonded together after being fully characterized independently. The targets are: beam-steering of ±75º, power consumption between 10 and 100 mW, and switching speed less than 1 μs.